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Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung V-GeN D4S8GL30A8TX5 8GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
Samsung V-GeN D4S8GL30A8TX5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL30A8TX5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 29
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 23
  • 读取速度，GB/s
    10.5 left arrow 16.8
  • 写入速度，GB/s
    7.1 left arrow 11.7
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 3147

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
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Samsung V-GeN D4S8GL30A8TX5 8GB
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内存RAM
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G Skill Intl F3-2133C9-4GAB 4GB
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ASint Technology SSA302G08-EGN1C 4GB
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内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
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G Skill Intl F3-1600C9-8GAR 8GB
G Skill Intl F3-1600C9-8GAR 8GB
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内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
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Kingston 9905598-025.A00G 8GB
内存RAM
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G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
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内存RAM
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Samsung M378A5244CB0-CTD 4GB
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Crucial Technology CT8G4SFS824A.C8FDR1 8GB
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