Micron Technology 16JTF1G64AZ-1G6E1 8GB vs Kingston HX316C10F/8 8GB

总分

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

总分

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

差异规格评论

差异

Micron Technology 16JTF1G64AZ-1G6E1 8GB

需要考虑的原因
Micron Technology 16JTF1G64AZ-1G6E1 8GB

报告一个错误

Kingston HX316C10F/8 8GB

需要考虑的原因
Kingston HX316C10F/8 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的读取速度，GB/s

14.7 14.4

测试中的平均数值
更快的写入速度，GB/s

9.2 9.0

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Kingston HX316C10F/8 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

43 36
读取速度，GB/s

14.4 14.7
写入速度，GB/s

9.0 9.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2422 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X16GE2400C16S4 16GB

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Kingston 9965525-155.A00LF 8GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

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Nanya Technology M2X4G64CB88CHN-DG 4GB

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Kingston XG9XKG-MIE 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMA851U6JJR6N-VK 4GB

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G Skill Intl F4-3000C15-4GRBB 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

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Samsung M474A4G43MB1-CTD 32GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

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G Skill Intl F4-3600C15-8GTZ 8GB