Micron Technology 16JTF25664AZ-1G4F1 2GB vs Crucial Technology BLS16G4D26BFSC.16FBD 16GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSC.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 -11% 更低的延时
更快的读取速度，GB/s

15 13.6

测试中的平均数值
更快的写入速度，GB/s

13.4 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 36
读取速度，GB/s

13.6 15.0
写入速度，GB/s

8.3 13.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2035 3098

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston HX318C10FK/4 4GB

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