Nanya Technology M2Y51264TU88B0B-3C 512MB vs Kingston KTD3KX-MIB 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 13

测试中的平均数值

Kingston KTD3KX-MIB 8GB

需要考虑的原因
Kingston KTD3KX-MIB 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 -108% 更低的延时
更快的写入速度，GB/s

6.9 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KTD3KX-MIB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 26
读取速度，GB/s

3,573.5 13.0
写入速度，GB/s

1,308.1 6.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 1931

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Avant Technology J644GU44J9266NF 32GB

Avant Technology J644GU44J9266NF 32GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

Strontium SRP2G86U1-S6M 2GB

Strontium SRP2G86U1-S6M 2GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Avant Technology W642GU42J7240N8 16GB

Avant Technology W642GU42J7240N8 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB