Micron Technology 16JTF25664AZ-1G4F1 2GB vs INTENSO 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

INTENSO 4GB

INTENSO 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

更快的读取速度，GB/s

13.6 12.1

测试中的平均数值

INTENSO 4GB

需要考虑的原因
INTENSO 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 -11% 更低的延时
更快的写入速度，GB/s

9.3 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

INTENSO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 36
读取速度，GB/s

13.6 12.1
写入速度，GB/s

8.3 9.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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AMD R538G1601U2S 8GB

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Corsair CMK16GX4M4A2133C15 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Apacer Technology GD2.1542WS.001 8GB

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Kingston 99U5315-023.A00LF 512MB

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Crucial Technology BL8G32C16U4BL.M8FE 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

Kingston KHX3200C18D4/8G 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Kingston ACR32D4S2S8ME-16 16GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

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Corsair CMV16GX4M1A2400C16 16GB