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Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Micron Technology 18ASF2G72AZ-2G1B1 16GB

总分
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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
Micron Technology 18ASF2G72AZ-2G1B1 16GB 需要考虑的原因
Micron Technology 18ASF2G72AZ-2G1B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 29
  • 读取速度，GB/s
    13.6 left arrow 14.2
  • 写入速度，GB/s
    8.3 left arrow 8.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 2909

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Crucial Technology BL16G32C16S4B.M16FE1 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Corsair CMK16GX4M1D3000C16 16GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Virtium Technology Inc. VL33A1G63F-N6S 8GB
内存RAM
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Ramaxel Technology RMT3170EB68F9W1600 4GB
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Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
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G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
内存RAM
Samsung M378B5173CB0-CK0 4GB
Samsung M378B5173CB0-CK0 4GB
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Kingston HX316C10F/8 8GB
内存RAM