Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung M378A5244CB0-CWE 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Samsung M378A5244CB0-CWE 4GB

需要考虑的原因
Samsung M378A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 40

左右 -18% 更低的延时
更快的读取速度，GB/s

16.7 13.6

测试中的平均数值
更快的写入速度，GB/s

12.3 8.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Samsung M378A5244CB0-CWE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 34
读取速度，GB/s

13.6 16.7
写入速度，GB/s

8.3 12.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2035 2584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

ASint Technology SLA304G08-GGNHM 4GB

ASint Technology SLA304G08-GGNHM 4GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB