RAM comparison Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung M378A5244CB0-CWE 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung M378A5244CB0-CWE 4GB

Overall score

Micron Technology 16JTF25664AZ-1G4F1 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Micron Technology 16JTF25664AZ-1G4F1 2GB

Reasons to consider
Samsung M378A5244CB0-CWE 4GB

Below the latency in the PassMark tests, ns

34 40

Around -18% lower latency
Faster reading speed, GB/s

16.7 13.6

Average value in the tests
Faster write speed, GB/s

12.3 8.3

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Complete list of technical specifications

Micron Technology 16JTF25664AZ-1G4F1 2GB

Samsung M378A5244CB0-CWE 4GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2035 2584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns