Micron Technology 16JTF51264HZ-1G6M1 4GB vs Avant Technology W641GU42J5213NC 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Avant Technology W641GU42J5213NC 8GB

Avant Technology W641GU42J5213NC 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Avant Technology W641GU42J5213NC 8GB

需要考虑的原因
Avant Technology W641GU42J5213NC 8GB

报告一个错误

更快的读取速度，GB/s

15.9 12.9

测试中的平均数值
更快的写入速度，GB/s

11.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avant Technology W641GU42J5213NC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.9 15.9
写入速度，GB/s

9.0 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMWB8G1L2666A16W4 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology CT16G4DFRA32A.C16FN 16GB

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Samsung M471B5273EB0-CK0 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Smart Modular SMU4WEC8C1K0464FCG 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Apacer Technology 78.CAGPN.DF40B 8GB

Apacer Technology 78.CAGPN.DF40B 8GB