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Crucial Technology CT51264BF160B.M16F 4GB
A-DATA Technology DDR4 2800 2OZ 4GB

Crucial Technology CT51264BF160B.M16F 4GB vs A-DATA Technology DDR4 2800 2OZ 4GB

总分
star star star star star
Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分
star star star star star
A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

差异 规格 评论

差异

Crucial Technology CT51264BF160B.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
A-DATA Technology DDR4 2800 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2800 2OZ 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    11.8 left arrow 16.2
  • 写入速度，GB/s
    8.2 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 3026

Crucial Technology CT51264BF160B.M16F 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB

A-DATA Technology DDR4 2800 2OZ 4GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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内存RAM
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Kingston 9965433-034.A00LF 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
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内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Crucial Technology BLS16G4D32AEST.M16FE 16GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
Transcend Information JM3200HLE-32G 32GB
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