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Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB

Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT16G4DFRA32A.C16FN 16GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Crucial Technology CT16G4DFRA32A.C16FN 16GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 39
    左右 23% 更低的延时
Crucial Technology CT16G4DFRA32A.C16FN 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA32A.C16FN 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 8500
    左右 3.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 39
  • 读取速度，GB/s
    10.6 left arrow 14.9
  • 写入速度，GB/s
    6.8 left arrow 11.3
  • 内存带宽，mbps
    8500 left arrow 25600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2771

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
内存RAM
A-DATA Technology AM1L16BC8R2-B1QS 8GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KH2400C15D4/8 8GB
Kingston KH2400C15D4/8 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston 99U5734-014.A00G 16GB
Kingston 99U5734-014.A00G 16GB
内存RAM
PNY Electronics 64C0MHHHJ-HS 4GB
PNY Electronics 64C0MHHHJ-HS 4GB
A-DATA Technology EL63I1C1624ZV 4GB
A-DATA Technology EL63I1C1624ZV 4GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C16-32GTZN 32GB
G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM