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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS8G4D240FSCK.8FBD 8GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
33
左右 15% 更低的延时
需要考虑的原因
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
报告一个错误
更快的读取速度,GB/s
14.7
12.9
测试中的平均数值
更快的写入速度,GB/s
9.9
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
33
读取速度,GB/s
12.9
14.7
写入速度,GB/s
9.0
9.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2112
2466
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
INTENSO 5641160 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Kingston 99U5474-037.A00LF 4GB
Samsung M378A5143EB1-CPB 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3333C16-16GTZB 16GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CB8GS2666.C8ET 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Corsair CML16GX3M2A1600C10 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
TwinMOS 8DPT5MK8-TATP 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
报告一个错误
×
Bug description
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