Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-2400C16-8GRS 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

G Skill Intl F4-2400C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRS 8GB

报告一个错误

更快的读取速度，GB/s

15.4 12.9

测试中的平均数值
更快的写入速度，GB/s

11.9 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-2400C16-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.9 15.4
写入速度，GB/s

9.0 11.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2780

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2C3333C16 8GB

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Corsair CMV4GX3M1B1600C11 4GB

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A-DATA Technology DDR4 2400 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Essencore Limited KD44GU480-26N160T 4GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

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SK Hynix HYMP112U64CP8-S5 1GB

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