Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-2400C17-8GNT 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

G Skill Intl F4-2400C17-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GNT 8GB

报告一个错误

更快的读取速度，GB/s

16.3 12.9

测试中的平均数值
更快的写入速度，GB/s

11.7 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-2400C17-8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.9 16.3
写入速度，GB/s

9.0 11.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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G Skill Intl F4-2400C17-8GNT 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 9965662-016.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

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G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB