Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-3000C16-16GSXKB 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

G Skill Intl F4-3000C16-16GSXKB 16GB

G Skill Intl F4-3000C16-16GSXKB 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 38% 更低的延时

G Skill Intl F4-3000C16-16GSXKB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GSXKB 16GB

报告一个错误

更快的读取速度，GB/s

16.6 12.9

测试中的平均数值
更快的写入速度，GB/s

11.7 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3000C16-16GSXKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 45
读取速度，GB/s

12.9 16.6
写入速度，GB/s

9.0 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMK16GX4M2B3600C18 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Gloway International (HK) STK4U2400D15082C 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT16G4DFD8266.M16FH 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

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A-DATA Technology DDR2 800G 2GB

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V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Transcend Information TS1GSH64V1H 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB