Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-3800C14-16GTZN 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

G Skill Intl F4-3800C14-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3800C14-16GTZN 16GB

报告一个错误

更快的读取速度，GB/s

21.7 12.9

测试中的平均数值
更快的写入速度，GB/s

16.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3800C14-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.9 21.7
写入速度，GB/s

9.0 16.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 3806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramsta Ramsta-2400Mhz-4G 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Apacer Technology 78.C2GF6.AU20B 8GB

Apacer Technology 78.C2GF6.AU20B 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9965600-005.A00G 16GB

Kingston 9965600-005.A00G 16GB