RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
45
左右 38% 更低的延时
需要考虑的原因
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
报告一个错误
更快的读取速度,GB/s
15.8
12.9
测试中的平均数值
更快的写入速度,GB/s
14.5
9.0
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
45
读取速度,GB/s
12.9
15.8
写入速度,GB/s
9.0
14.5
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2112
3102
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information TS1GSH64V4B 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Kingston KHX1600C9S3L/8G 8GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
Unifosa Corporation HU564404EP0200 4GB
Panram International Corporation W4N2400PS-8G 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M391A1G43DB0-CPB 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M391A1K43BB2-CTD 8GB
报告一个错误
×
Bug description
Source link