RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
13.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
46
左右 -100% 更低的延时
更快的写入速度,GB/s
6.7
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
23
读取速度,GB/s
5,535.6
13.6
写入速度,GB/s
1,852.4
6.7
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
2339
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB RAM的比较
A-DATA Technology DQVE1908 512MB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
AMD R5316G1609U2K 8GB
Golden Empire CL16-20-20 D4-3200 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation D4N2666PS-16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905663-012.A00G 16GB
报告一个错误
×
Bug description
Source link