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Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9932291-002.A00G 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Kingston 9932291-002.A00G 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.0 left arrow 8.8
    测试中的平均数值
Kingston 9932291-002.A00G 4GB 需要考虑的原因
Kingston 9932291-002.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9932291-002.A00G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    12.9 left arrow 15.5
  • 写入速度，GB/s
    9.0 left arrow 8.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2252

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Kingston 9932291-002.A00G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Panram International Corporation D4U2666P-8G 8GB
内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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SK Hynix HMAA4GS6CJR8N-XN 32GB
内存RAM
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内存RAM
Samsung 1600 CL10 Series 8GB
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内存RAM
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Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
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Kingston ACR16D3LS1KNG/4G 4GB
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Samsung M471A2K43CB1-CRCR 16GB
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