Micron Technology 16JTF51264HZ-1G6M1 4GB vs Kingston KHX426C13/8G 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 29

左右 3% 更低的延时
更快的写入速度，GB/s

9.0 7.5

测试中的平均数值

Kingston KHX426C13/8G 8GB

需要考虑的原因
Kingston KHX426C13/8G 8GB

报告一个错误

更快的读取速度，GB/s

13.7 12.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston KHX426C13/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 29
读取速度，GB/s

12.9 13.7
写入速度，GB/s

9.0 7.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 2610

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM2X2048-6400C5 2GB

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Corsair CMW8GX4M1D3000C16 8GB

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AMD R5316G1609U2K 8GB

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Hypertec G2RT-4AFT00 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingmax Semiconductor GLLF62F-D8---------- 4GB

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Samsung M471B5773DH0-CH9 2GB

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PNY Electronics PNY 2GB

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Kingston 9905622-058.A00G 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK16GX4M4A2400C14 4GB

Corsair CMK16GX4M4A2400C14 4GB

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Kingston K1N7HK-ELC 2GB

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Hyundai Inc AR36C18S8K2HU416R 8GB