Micron Technology 16JTF51264HZ-1G6M1 4GB vs Team Group Inc. TEANGROUP-UD4-2400 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Team Group Inc. TEANGROUP-UD4-2400 8GB

需要考虑的原因
Team Group Inc. TEANGROUP-UD4-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 -22% 更低的延时
更快的读取速度，GB/s

17.1 12.9

测试中的平均数值
更快的写入速度，GB/s

13.5 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 23
读取速度，GB/s

12.9 17.1
写入速度，GB/s

9.0 13.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2922

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT25664AA800.M16FM 2GB

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Corsair CMG16GX4M2D3600C18 8GB

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Samsung M393B1G70QH0-YK0 8GB

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Kingston 99U5700-010.A00G 8GB

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Crucial Technology CB8GS2666.C8ET 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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SK Hynix HMA851U6DJR6N-WM 4GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

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G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

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Corsair CMD16GX4M4B3200C16 4GB

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