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Micron Technology 16KTF1G64AZ-1G6E1 8GB
Kingston KVR16N11/8-SP 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB vs Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Micron Technology 16KTF1G64AZ-1G6E1 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

差异 规格 评论

差异

Micron Technology 16KTF1G64AZ-1G6E1 8GB 需要考虑的原因
Micron Technology 16KTF1G64AZ-1G6E1 8GB
报告一个错误
Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.2
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Kingston KVR16N11/8-SP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    40 left arrow 26
  • 读取速度，GB/s
    13.3 left arrow 13.9
  • 写入速度，GB/s
    8.2 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2288 left arrow 2432

Micron Technology 16KTF1G64AZ-1G6E1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
AMD R538G1601S2LS 8GB

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378B5273EB0-CK0 4GB
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Samsung M4 70T2864QZ3-CF7 1GB
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内存RAM
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内存RAM
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内存RAM
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AMD R744G2133U1S 4GB
内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM