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Micron Technology 16KTF51264HZ-1G4M1 4GB
Apacer Technology 76.C102G.D170B 8GB

Micron Technology 16KTF51264HZ-1G4M1 4GB vs Apacer Technology 76.C102G.D170B 8GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G4M1 4GB

Micron Technology 16KTF51264HZ-1G4M1 4GB

总分
star star star star star
Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G4M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G4M1 4GB
报告一个错误
Apacer Technology 76.C102G.D170B 8GB 需要考虑的原因
Apacer Technology 76.C102G.D170B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 47
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 8.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 4.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G4M1 4GB
Apacer Technology 76.C102G.D170B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 31
  • 读取速度，GB/s
    8.4 left arrow 16.1
  • 写入速度，GB/s
    4.9 left arrow 13.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1210 left arrow 3022

Micron Technology 16KTF51264HZ-1G4M1 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMT351S6CFR8C-H9 4GB

Apacer Technology 76.C102G.D170B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16KTF51264HZ-1G4M1 4GB
Micron Technology 16KTF51264HZ-1G4M1 4GB
Apacer Technology 76.C102G.D170B 8GB
Apacer Technology 76.C102G.D170B 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMR16GX4M2Z2933C16 8GB
Corsair CMR16GX4M2Z2933C16 8GB
内存RAM
SK Hynix HMA425S6BJR6N-UH 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
Kingston HP26D4S9S1ME-4 4GB
Kingston HP26D4S9S1ME-4 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
内存RAM
Micron Technology 16KTF51264HZ-1G4M1 4GB
Micron Technology 16KTF51264HZ-1G4M1 4GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology GD2.22428S.001 8GB
Apacer Technology GD2.22428S.001 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Apacer Technology 78.BAGSR.4030B 4GB
Apacer Technology 78.BAGSR.4030B 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM