Micron Technology 18HTF12872AY-800F1 1GB vs Corsair CM4B16G1J2400A16K2-O 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Corsair CM4B16G1J2400A16K2-O 16GB

Corsair CM4B16G1J2400A16K2-O 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.9

测试中的平均数值

Corsair CM4B16G1J2400A16K2-O 16GB

需要考虑的原因
Corsair CM4B16G1J2400A16K2-O 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CM4B16G1J2400A16K2-O 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,025.3 17.6
写入速度，GB/s

2,107.0 12.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 3189

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4B8G2J3000K15K 8GB

Corsair CM4B8G2J3000K15K 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB