Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-3866C18-4GTZ 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-3866C18-4GTZ 4GB

G Skill Intl F4-3866C18-4GTZ 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 19.1

测试中的平均数值
更快的写入速度，GB/s

2,107.0 14.3

测试中的平均数值

G Skill Intl F4-3866C18-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3866C18-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 -115% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3866C18-4GTZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 27
读取速度，GB/s

4,025.3 19.1
写入速度，GB/s

2,107.0 14.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 3040

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G2139U2 4GB

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Ramaxel Technology RMSA3300MH78HBF-2666 16GB

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Samsung M474A2K43BB1-CPB 16GB

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Crucial Technology BL16G26C16U4B.16FD 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M386B4G70DM0-CMA4 32GB

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INTENSO GKE800UD102408-2133 8GB

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Corsair CM2X1024-6400C4 1GB

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Corsair CM4X16GE2666Z16K4 16GB