AMD R538G1601U2S 8GB vs Samsung M471A1K43EB1-CWE 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 46

左右 59% 更低的延时
更快的读取速度，GB/s

18.4 16

测试中的平均数值

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的写入速度，GB/s

12.4 12.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 46
读取速度，GB/s

18.4 16.0
写入速度，GB/s

12.3 12.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3189 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

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Micron Technology AFSD416ES1P 16GB

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Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

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Kingston 9905625-075.A00G 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Gloway International (HK) STK4U2400D17081C 8GB

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Kingston 99U5474-010.A00LF 2GB

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Kingston 9905471-071.A00LF 8GB

G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB