RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A2G43BB3-CWE 16GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M378A2G43BB3-CWE 16GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
Samsung M378A2G43BB3-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
17.9
测试中的平均数值
更快的写入速度,GB/s
2,107.0
10.4
测试中的平均数值
需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB
报告一个错误
低于PassMark测试中的延时,ns
38
58
左右 -53% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A2G43BB3-CWE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
38
读取速度,GB/s
4,025.3
17.9
写入速度,GB/s
2,107.0
10.4
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
670
3030
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Samsung M378A2G43BB3-CWE 16GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT351S6CFR8C-PB 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C16-8GRKB 8GB
SK Hynix HMT351S6BFR8C-H9 4GB
Samsung 9905599-020.A00G 16GB
Kingston KHX1866C10D3/4G 4GB
Kingston KHX426C13/8G 8GB
Kingston 99U5474-038.A00LF 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Corsair CMSX16GX4M1A2666C18 16GB
Samsung M471A2K43DB1-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Avant Technology W6451U48J7240N6 4GB
Kingston 99U5474-013.A00LF 2GB
Corsair CMK16GX4M2Z3200C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KVR24N17S8/4 4GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-4266C19-8GTZR 8GB
报告一个错误
×
Bug description
Source link