Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M474A2K43BB1-CRC 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值
更快的写入速度，GB/s

2,107.0 13.2

测试中的平均数值

Samsung M474A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M474A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 58

左右 -71% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M474A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 34
读取速度，GB/s

4,025.3 15.9
写入速度，GB/s

2,107.0 13.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 2927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Smart Modular SMS4TDC3C0K0446SCG 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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