Micron Technology 36ASF2G72PZ-2G1A2 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

差异规格评论

差异

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

更高的内存带宽，mbps

17500 17000

左右 1.03% 更高的带宽

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 52

左右 -86% 更低的延时
更快的读取速度，GB/s

18.5 10.2

测试中的平均数值
更快的写入速度，GB/s

15.7 8.2

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

52 28
读取速度，GB/s

10.2 18.5
写入速度，GB/s

8.2 15.7
内存带宽，mbps

17500 17000

Other

描述

PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2319 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

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SK Hynix HMA82GS6MFR8N-TF 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Samsung M393A1G40EB1-CPB 8GB

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