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Micron Technology 36ASF2G72PZ-2G1A2 16GB
Crucial Technology CT8G4SFS632A 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Crucial Technology CT8G4SFS632A 8GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分
star star star star star
Crucial Technology CT8G4SFS632A 8GB

Crucial Technology CT8G4SFS632A 8GB

差异 规格 评论

差异

Micron Technology 36ASF2G72PZ-2G1A2 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
Crucial Technology CT8G4SFS632A 8GB 需要考虑的原因
Crucial Technology CT8G4SFS632A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 52
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17500
    左右 1.46 更高的带宽

规格

完整的技术规格清单
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Crucial Technology CT8G4SFS632A 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 43
  • 读取速度，GB/s
    10.2 left arrow 16.5
  • 写入速度，GB/s
    8.2 left arrow 12.3
  • 内存带宽，mbps
    17500 left arrow 25600
Other
  • 描述
    PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    no data left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2319 left arrow 2885

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4SFS632A 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Corsair CMK32GX4M4K4133C19 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Avant Technology J641GU49J2320NE 8GB
Avant Technology J641GU49J2320NE 8GB
内存RAM