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Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M471A1K43CB1-CRC 8GB
比较
Micron Technology 4ATF51264HZ-2G3B1 4GB vs Samsung M471A1K43CB1-CRC 8GB
总分
Micron Technology 4ATF51264HZ-2G3B1 4GB
总分
Samsung M471A1K43CB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
37
左右 5% 更低的延时
更快的读取速度,GB/s
14.8
13.9
测试中的平均数值
更快的写入速度,GB/s
11.2
9.9
测试中的平均数值
需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB
报告一个错误
规格
完整的技术规格清单
Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M471A1K43CB1-CRC 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
35
37
读取速度,GB/s
14.8
13.9
写入速度,GB/s
11.2
9.9
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2336
2389
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1K43CB1-CRC 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M471A1K43CB1-CRC 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK16GX4M2D2400C14 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Kingston 99U5428-040.A00LF 4GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2666C15-16GVR 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Corsair CMD16GX3M2A1866C9 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Samsung M395T2863QZ4-CF76 1GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Kingston 9965525-054.A00LF 4GB
Super Talent F24UB16GV 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Patriot Memory (PDP Systems) PSD24G8002 4GB
Kingston 9905700-053.A00G 8GB
报告一个错误
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Bug description
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