Micron Technology 4ATF51264HZ-2G6E1 4GB vs Patriot Memory (PDP Systems) PSD34G13332 4GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Patriot Memory (PDP Systems) PSD34G13332 4GB

Patriot Memory (PDP Systems) PSD34G13332 4GB

差异规格评论

差异

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 40

左右 5% 更低的延时
更快的读取速度，GB/s

14.2 13.3

测试中的平均数值
更快的写入速度，GB/s

10.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01% 更高的带宽

Patriot Memory (PDP Systems) PSD34G13332 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G13332 4GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 4ATF51264HZ-2G6E1 4GB

Patriot Memory (PDP Systems) PSD34G13332 4GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

38 40
读取速度，GB/s

14.2 13.3
写入速度，GB/s

10.3 8.4
内存带宽，mbps

21300 10600

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2148 2229

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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