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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
51
左右 -89% 更低的延时
更快的读取速度,GB/s
18.2
15.6
测试中的平均数值
更快的写入速度,GB/s
16.8
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
27
读取速度,GB/s
15.6
18.2
写入速度,GB/s
11.8
16.8
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3731
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3200C16-8GVR 8GB
Kingston KHX2800C14D4/8GX 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Kingston KF556C40-16 16GB
Kingston HX432C15PB3/16 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M471B5673FH0-CF8 2GB
Corsair CMK16GX4M2L3200C16 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2800C16-4GVR 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CB8GS2666.C8ET 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston HP26D4S9S8MHF-8 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
报告一个错误
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