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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLS16G4D26BFSB.16FBR 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
51
左右 -122% 更低的延时
更快的读取速度,GB/s
17.5
15.6
测试中的平均数值
更快的写入速度,GB/s
12.3
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
23
读取速度,GB/s
15.6
17.5
写入速度,GB/s
11.8
12.3
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3087
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Crucial Technology BLS16G4D26BFSB.16FBR 16GB
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Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMK16GX4M2K4333C19 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905625-036.A00G 16GB
报告一个错误
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Bug description
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