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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLS8G4D30AESBK.M8FE 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
51
左右 -82% 更低的延时
更快的读取速度,GB/s
18.5
15.6
测试中的平均数值
更快的写入速度,GB/s
14.4
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
28
读取速度,GB/s
15.6
18.5
写入速度,GB/s
11.8
14.4
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
3402
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905624-022.A00G 8GB
Kingston KHX318C10FR/8G 8GB
Samsung M393A2K43BB1-CPB 16GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
报告一个错误
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Bug description
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