Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLT4G4D30AETA.K8FE 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Crucial Technology BLT4G4D30AETA.K8FE 4GB

需要考虑的原因
Crucial Technology BLT4G4D30AETA.K8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 51

左右 -155% 更低的延时
更快的读取速度，GB/s

18.5 15.6

测试中的平均数值
更快的写入速度，GB/s

14.3 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 20
读取速度，GB/s

15.6 18.5
写入速度，GB/s

11.8 14.3
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 2965

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Essencore Limited IM48GU88N26-GIIHMB 8GB

Essencore Limited IM48GU88N26-GIIHMB 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Apacer Technology 78.DAGRL.4050C 16GB

Apacer Technology 78.DAGRL.4050C 16GB

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Avant Technology J642GU42J9266N4 16GB

Avant Technology J642GU42J9266N4 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3466C16-16GTZSW 16GB

G Skill Intl F4-3466C16-16GTZSW 16GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Nanya Technology NT8GC72B4NB1NK-CG 8GB

Nanya Technology NT8GC72B4NB1NK-CG 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C