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Micron Technology 8ATF2G64HZ-3G2E2 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs EXCELERAM D4168G8HHSS9CJRB21 16GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 89
    左右 43% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
EXCELERAM D4168G8HHSS9CJRB21 16GB 需要考虑的原因
EXCELERAM D4168G8HHSS9CJRB21 16GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 89
  • 读取速度，GB/s
    15.6 left arrow 14.2
  • 写入速度，GB/s
    11.8 left arrow 7.1
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 1571

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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EXCELERAM D4168G8HHSS9CJRB21 16GB
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