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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-32GTZR 32GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3200C16-32GTZR 32GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-3200C16-32GTZR 32GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
G Skill Intl F4-3200C16-32GTZR 32GB
报告一个错误
低于PassMark测试中的延时,ns
30
51
左右 -70% 更低的延时
更快的读取速度,GB/s
17.6
15.6
测试中的平均数值
更快的写入速度,GB/s
15.1
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-32GTZR 32GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
30
读取速度,GB/s
15.6
17.6
写入速度,GB/s
11.8
15.1
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3728
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-32GTZR 32GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AD73I1C1674EV 4GB
Samsung V-GeN D4S8GL24A8 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-32GTZR 32GB
Samsung M391B5673EH1-CH9 2GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-16GTZKY 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL8G32C16U4B.8FE 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905701-141.A00G 16GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CM4X16GD3200C16K4E 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905702-019.A00G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
AMD R5316G1609U2K 8GB
Heoriady HX2666DT8G-TD 8GB
报告一个错误
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Bug description
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