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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C17-8GTZR 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C17-8GTZR 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-3600C17-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C17-8GTZR 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
51
左右 -76% 更低的延时
更快的读取速度,GB/s
18.5
15.6
测试中的平均数值
更快的写入速度,GB/s
15.7
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C17-8GTZR 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
29
读取速度,GB/s
15.6
18.5
写入速度,GB/s
11.8
15.7
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
3676
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C17-8GTZR 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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PUSKILL DDR3 1600 8G 8GB
Apacer Technology D22.2221ZA.001 8GB
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Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3600C15-8GTZ 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMSX16GX4M2A3200C22 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK32GX4M4E4133C19 8GB
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393B5270CH0-CH9 4GB
Avant Technology W642GU42J7240N8 16GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C18-8GVK 8GB
报告一个错误
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Bug description
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