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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C18-16GTZN 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4000C18-16GTZN 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-4000C18-16GTZN 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
G Skill Intl F4-4000C18-16GTZN 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
51
左右 -65% 更低的延时
更快的读取速度,GB/s
20.1
15.6
测试中的平均数值
更快的写入速度,GB/s
16.4
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C18-16GTZN 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
31
读取速度,GB/s
15.6
20.1
写入速度,GB/s
11.8
16.4
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3823
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C18-16GTZN 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Mushkin 991586 2GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905700-017.A00G 8GB
Kingston HP687515-H66-MCN 4GB
AMD R534G1601U1S 4GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK128GX4M8B3200C16 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA82GR7AFR4N-VK 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2133C15-16GFX 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CM4B8G1J2800K14K 8GB
A-DATA Technology DOVF1B163G2G 2GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Corsair VS1GB800D2 1GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Kingston 9905471-001.A01LF 2GB
Kingston HX424C15FB/8 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung V-GeN D4S8GL24A8 8GB
报告一个错误
×
Bug description
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