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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4400C19-16GVK 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4400C19-16GVK 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
G Skill Intl F4-4400C19-16GVK 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
G Skill Intl F4-4400C19-16GVK 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
51
左右 -59% 更低的延时
更快的读取速度,GB/s
20.5
15.6
测试中的平均数值
更快的写入速度,GB/s
15.5
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4400C19-16GVK 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
32
读取速度,GB/s
15.6
20.5
写入速度,GB/s
11.8
15.5
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3672
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4400C19-16GVK 16GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Samsung 1600 CL10 Series 8GB
Kingston KF2666C16D4/16G 16GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMK64GX4M4C3000C15 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Samsung M386B4G70DM0-CMA4 32GB
Avexir Technologies Corporation T 4GB
ASint Technology SSA302G08-EGN1C 4GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-3866C18-8GTZR 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Good Wealth Technology Ltd. KETECH 8GB
Qimonda 72T128420EFA3SB2 1GB
Transcend Information JM3200HLB-16G 16GB
报告一个错误
×
Bug description
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