Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4500C19-8GTZSWE 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-4500C19-8GTZSWE 8GB

需要考虑的原因
G Skill Intl F4-4500C19-8GTZSWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 51

左右 -264% 更低的延时
更快的读取速度，GB/s

25.1 15.6

测试中的平均数值
更快的写入速度，GB/s

19.3 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 14
读取速度，GB/s

15.6 25.1
写入速度，GB/s

11.8 19.3
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 4182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR24D4S7S8MB-8 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology CT4G4SFS8213.C8FADP 4GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Transcend Information AQD-SD4U4GN21-SG 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston KHX2400C12D4/4GX 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Patriot Memory (PDP Systems) PSD416G26662 16GB

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