RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4500C19-8GTZSWE 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-4500C19-8GTZSWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-4500C19-8GTZSWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
14
51
Around -264% lower latency
Faster reading speed, GB/s
25.1
15.6
Average value in the tests
Faster write speed, GB/s
19.3
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
14
Read speed, GB/s
15.6
25.1
Write speed, GB/s
11.8
19.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
4182
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4500C19-8GTZSWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 76.C102G.D170B 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Qimonda 64T128020EDL2.5C2 1GB
Corsair CMK16GX4M4B3400C16 4GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905622-057.A00G 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CM4X8GD3000C16K4 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK16GX4M2C3000C16 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-4GVRB 4GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905703-011.A00G 16GB
PNY Electronics PNY 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
×
Bug description
Source link