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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965589-007.D01G 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingston 9965589-007.D01G 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Kingston 9965589-007.D01G 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
9.1
测试中的平均数值
更快的写入速度,GB/s
11.8
7.6
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Kingston 9965589-007.D01G 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
51
左右 -46% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965589-007.D01G 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
35
读取速度,GB/s
15.6
9.1
写入速度,GB/s
11.8
7.6
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2078
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9965589-007.D01G 8GB RAM的比较
Kingston 9965669-018.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Swissbit MEU25664D6BC2EP-30 2GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Apacer Technology 78.01GA0.9K5 1GB
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报告一个错误
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Bug description
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