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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology AFLD416EH1P 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology AFLD416EH1P 16GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 6.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Micron Technology AFLD416EH1P 16GB 需要考虑的原因
Micron Technology AFLD416EH1P 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 51
    左右 -82% 更低的延时

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology AFLD416EH1P 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 28
  • 读取速度，GB/s
    15.6 left arrow 13.7
  • 写入速度，GB/s
    11.8 left arrow 6.9
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 2312

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology AFLD416EH1P 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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