RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology CT4G4DFS8213.8FA11 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology CT4G4DFS8213.8FA11 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Micron Technology CT4G4DFS8213.8FA11 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Micron Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
51
左右 -46% 更低的延时
更快的写入速度,GB/s
12.0
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology CT4G4DFS8213.8FA11 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
35
读取速度,GB/s
15.6
15.0
写入速度,GB/s
11.8
12.0
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2654
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology CT4G4DFS8213.8FA11 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Kingston 99U5428-018.A00LF 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston KHX16LC9/8GX 8GB
Corsair CM4X4GF2666C16K4 4GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMSX16GX4M1A2400C16 16GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMD16GX4M2B3866C18 8GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
G Skill Intl F3-1866C8-8GTX 8GB
Kingston KF2666C16D4/8G 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CB8GU2400.C8D 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston ACR26D4U9S8MH-8 8GB
Kingston 9905403-011.A03LF 2GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
报告一个错误
×
Bug description
Source link