Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Patriot Memory (PDP Systems) 2666 C15 Series 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 2666 C15 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 51

左右 -65% 更低的延时
更快的读取速度，GB/s

16.3 15.6

测试中的平均数值
更快的写入速度，GB/s

12.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 31
读取速度，GB/s

15.6 16.3
写入速度，GB/s

11.8 12.8
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 3084

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173BH0-CH9 4GB

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Kingston 9905403-437.A01LF 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology BLS8G4D240FSEK.8FD 8GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-2400C17-8GFT 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMK16GX4M4A2133C15 4GB

Corsair CMK16GX4M4A2133C15 4GB