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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB0-CPB 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M393A2G40DB0-CPB 16GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 53
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 10.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Samsung M393A2G40DB0-CPB 16GB 需要考虑的原因
Samsung M393A2G40DB0-CPB 16GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB0-CPB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 53
  • 读取速度，GB/s
    15.6 left arrow 10.3
  • 写入速度，GB/s
    11.8 left arrow 8.1
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 2333

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A2G40DB0-CPB 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M393A2G40DB0-CPB 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Golden Empire CL14-14-14 D4-2400 16GB
Golden Empire CL14-14-14 D4-2400 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK16GX4M2C3000C16 8GB
Corsair CMK16GX4M2C3000C16 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM2400HSB-8G 8GB
Transcend Information JM2400HSB-8G 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX3600C18D4/32GX 32GB
Kingston KHX3600C18D4/32GX 32GB
内存RAM