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Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-GEN D4H4GL30A8TS5 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs V-GEN D4H4GL30A8TS5 4GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 90
    左右 43% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
V-GEN D4H4GL30A8TS5 4GB 需要考虑的原因
V-GEN D4H4GL30A8TS5 4GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-GEN D4H4GL30A8TS5 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 90
  • 读取速度，GB/s
    15.6 left arrow 15.6
  • 写入速度，GB/s
    11.8 left arrow 8.7
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 1743

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

V-GEN D4H4GL30A8TS5 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM
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内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Kingston 9905624-036.A00G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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Kingston KCDT82-MIE 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
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Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Heoriady M471A1K43CB1-CTD 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Apacer Technology 78.CAGP7.AFW0C 8GB
内存RAM