Micron Technology 8ATF51264AZ-2G1B1 4GB vs A-DATA Technology DDR4 2133 2OZ 8GB

总分

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分

A-DATA Technology DDR4 2133 2OZ 8GB

A-DATA Technology DDR4 2133 2OZ 8GB

差异规格评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时
更快的读取速度，GB/s

15.8 14.4

测试中的平均数值
更快的写入速度，GB/s

11.8 10.9

测试中的平均数值

A-DATA Technology DDR4 2133 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 2133 2OZ 8GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 8ATF51264AZ-2G1B1 4GB

A-DATA Technology DDR4 2133 2OZ 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

15.8 14.4
写入速度，GB/s

11.8 10.9
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2711 2647

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393A4K40CB1-CRC 32GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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G Skill Intl F4-4000C17-16GTRSB 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

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Kingston CBD24D4S7D8MA-16 16GB

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Panram International Corporation D4U2666P-8G 8GB